US developed GaNLED new coating to enhance LED brightness

North Carolina State University has recently developed a new technology that can significantly increase the brightness of LEDs without increasing power consumption, while providing greater stability and applicability. This technology-related research article has been published in the famous chemical journal Langmuir.
The first author of the study was Stewart at North Carolina State University. Dr. Wilkins, he said that the method they used was to add a phosphonic acid coating to the commonly used GaN LEDs. The researchers first used multilayer self-assembly techniques to produce GaN, then added organic phosphorus containing phosphoric acid molecules, and finally applied it to the surface of the GaN material. GaN can improve the light efficiency of LEDs, and the phosphonic acid group material can ensure the stability of GaN, making it difficult to react with substances in the environment.
The stability of GaN is important, Wilkins said, because it will make it more likely to be applied to biomedicine, such as implantable sensors.
Related studies have shown that GaN can increase the light output of LEDs compared to ordinary silicon materials. In the case of the same energy consumption, the luminous flux of the silicon material LED can reach 1000 lumens, while the GaN LED can reach 2000 lumens. In addition, GaN LEDs are smaller in size and quality, and are easier to implement with different types of integration.

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